The Planar High-Voltage Solar Cell on the Basis of tht Homogeneous Simiconductor
Abstract
Usual homogeneous semiconductor photoconverters (PC), including one p-n junction (Lidorenko et al. 1988, Arbuzov and Evdokimov 2008), generate the voltage, determined by the height of the potential barrier of junction. For technologically the most used photoelectric materials, silicon and gallium arsenide, at illumination with intensity of the order one solar voltage achieve 0,6-0,9 V. At the same time for the operation of the typical electronic equipment the voltage considerably exceeding these values (up to ten times) that is carried out due to commutation separate PC in the battery are required. However it leads to inevitable ohmic and commutation losses of power, therefore the problem of creation effective PC with voltage increased even in some times is actual.