A Promising Photovoltaic Architecture with Dual Quantum Tunneling in a Monolithic Perovskite/si Tandem Device
Abstract
Abstract: An efficient photovoltaic architecture has been constructed with organic-inorganic metal halide perovskite upper cell and asymmetric heterojunction silicon-based dual carrier’s tunneling framework as lower cell, in which a natural recombination layer of about 80 nm ITO film is formed from r.f magnetron sputtering deposition of hole selected ultra-thin passivating contact a-SiOx(In) layer on silicon substrate together with ITO capping layer. At rear side of the Si wafer a wet chemical oxidized SiOx (<1.6 nm) and subsequently d.c magnetron sputtered TiNx coupling layer of SiOx/TiNx acts as electron selective contact capping layer, thus, the quantum tunneling from both hole and electron in the front or back of silicon wafer has been figured out on one side. Finally, the Si-based bottom cell is covered by a structure of merit p-i-n perovskite cell as a monolithic tandem PV system. The opto-electric conversion efficiency of the simple tandem device has been numerically evaluated to be more than 30%, under the optimization of short-circuit current, open-circuit voltage and filled factor of the complex architecture.