Study on Amorphous Silicon Single Junction p-i-n PV Cell
Abstract
The performance of solar PV cells depends on its design, material properties and fabrication technology. In this study design and analysis on thin film single junction hydrogenated amorphous silicon (aSi:H) has showed that the efficiency of a single junction PV cell can be achieved upto 9.823% for with optimized window layer bandgap of 1.85eV. For this the current density is 13.827 mA/cm2, open circuit voltage is 0.987 volts and fill factor is 0.719. Moreover different interface recombination velocities are applied to investigate the impacts on short-circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF) and efficiency ( ). Higher recombination velocity of front and back contact give a detrimental impact on Jsc& . Jsc and drastically decline in the range where surface recombination speed are greater than 104 cm/s. it would be possible to yield efficiency more than 10% by reducing surface recombination speed from 107 cm/s to 104cm/s. The Quantum Efficiency (QE) curve has revealed that the cell has good spectral response in the wavelength range 0.4 μm – 0.65 μm which means that it would be a good candidate as a top cell of double junction/ micromorph solar cell configuration and as a middle cell in triple junction structure. The research has been carried out with AMPS-1D modelling and computer simulation program.
Keywords
Thin film solar cell, Amorphous silicon solar cell