A Sensitivity Analyses of a p-i-n Perovskite Solar Cell with a Fixed Band Gap
Abstract
Solar cell developers should have the theoretical knowledge how to best manipulate the solar cell properties in order to improve in a most effective way the solar cell efficiency. Such knowledge can be obtained by the simulation of the solar cells efficiency. Here a validated analytical model is used in order to simulate the model efficiency of the hybrid p-i-n solar cell in a multidimensional property space. The analytical model is based on a self-consistent stationary quantum simulation of the charge carrier generation and is established on the drift diffusion and the Poisson equations. The model simplifies the numerical simulation of the carrier generation as a function of the penetration deepness of the solar radiation, where the total charge generation is obtained by integration of local generated charges over the whole absorber layer thickness. Recombination currents at the p and n transport layers are considered as a function of (i) the diffusion coefficients of the free charges, (ii) the excess and the moderation of charges at the front and the back of solar cell, (iii) the effective surface recombination velocities of these charges and the (v) the solar cells built-in voltage. By use of a sensitivity analysis, it is shown how the properties of an ideal perovskite cell should be manipulated in order to improve its efficiency.
Keywords
Perovskite solar cell (psc), Analytical psc model, Sensitivity analysis.